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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V (Min) *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature 10 A PC 50 W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1154 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.2 V VCE= 350V; VBE= 0 ICES Collector Cutoff Current VCE= 350V; VBE= 0;TC= 100 0.1 mA 1 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 5 mA hFE DC Current Gain IC= 5A ; VCE= 4V 11 36 tf Fall Time IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5 0.75 s hFE Classifications R 11-15 Q 11-22 P 18-36 isc Websitewww.iscsemi.cn |
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